MIP0210SY ic equivalent, silicon mos ic.
q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent pr.
φ3.7±0.1
13.5±0.5
Solder Dip
s Absolute Maximum Ratings (Ta = 25 ± 3°C)
Parameter Symbol Ratings 700 8 Drain voltage.
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